Keng Chen received the B.S. degree in illuminating engineering and light sources from Fudan University, Shanghai, China, in 2006; the M.S. degree in lighting from Rensselaer Polytechnic Institute, Troy, NY, USA, in 2008; and the M.S. degree in electrical engineering from Columbia University, New York, NY, USA, in 2011. He received his Ph.D. degree in electrical engineering from Northeastern University.
From 2010 to 2016, Keng worked in Osram Sylvania as a Senior Electrical Engineer in the power supply R&D group, Wilmington, MA . Since 2016 to 2022, Keng was a Mixed-Signal Design Senior Staff Engineer at Infineon Technology in the PMM DCDC Research and Development Group, Andover, MA, USA. Start from 2022, Keng has joined Intel Corp. as an Sr. Staff Analog Mixed-Signal Design Engineer. His current research interests include high-accuracy analog circuit design and power management integrated circuit design. Keng has published 11 journal articles and held 20 patents.
Keng Chen received the B.S. degree in illuminating engineering and light sources from Fudan University, Shanghai, China, in 2006; the M.S. degree in lighting from Rensselaer Polytechnic Institute, Troy, NY, USA, in 2008; and the M.S. degree in electrical engineering from Columbia University, New York, NY, USA, in 2011. He received his Ph.D. degree in electrical engineering from Northeastern University.
From 2010 to 2016, Keng worked in Osram Sylvania as a Senior Electrical Engineer in the power supply R&D group, Wilmington, MA . Since 2016 to 2022, Keng was a Mixed-Signal Design Senior Staff Engineer at Infineon Technology in the PMM DCDC Research and Development Group, Andover, MA, USA. Start from 2022, Keng has joined Intel Corp. as an Sr. Staff Analog Mixed-Signal Design Engineer. His current research interests include high-accuracy analog circuit design and power management integrated circuit design. Keng has published 11 journal articles and held 20 patents.