Faculty Papers in the WPI Archives

---

Series[ Faculty publications
Subseries[ Lanyon Peter D 
Contents[

Avalanche breakdown in polycrystalline selenium rectifiers / H.P.D. Lanyon.
Paper, 1970, pp.535-544.
 
Bandgap narrowing in heavily doped silicon / H.P.D. Lanyon.
Abstract, presented at International Electron Device Meeting,
Dec 4-6, 1978, typed ms, 4p.

The physics of heavily-doped N+-P junction solar cells / H.P.D.
Lanyon. Presented at IEEE International Electron Devices
Meeting, typed ms, Dec. 1980, 4p.

The physics of heavily doped n+-p junction solar cells / H.P.D.
Lanyon. Solar Cells, 3 (1981), pp.289-311.

Shallow level recombination current dominance in transistor betas
/ H.P.D. Lanyon. IEEE Electron Letters, V.14, no.2 (Feb
1993), pp.49-50.

Heavy doping and high fluid effects in semiconductor devices /
H.P.D. Lanyon. Presented in Europe, (July 1993), typed ms.
 
Semiconductor devices / H.P.D. Lanyon. Proceedings of 8th International
Workshop on physics of semiconductor devices, New Delhi, India, Dec. 1995,
pp.261-268.
 

---